You can contact me for the best price MTD1N50ET4 IC Power MOSFET 1 Amp, 500 Volts N−Channel DPAK Hot sale original

Product Details

This high voltage MOSFET uses an advanced termination scheme

to provide enhanced voltage−blocking capability without degrading

performance over time. In addition this advanced high voltage

MOSFET is designed to withstand high energy in the avalanche and

commutation modes. The energy efficient design also offers a

drain−to−source diode with a fast recovery time. Designed for high

voltage, high speed switching applications in power supplies,

converters and PWM motor controls, these devices are particularly

well suited for bridge circuits where diode speed and commutating

safe operating areas are critical and offer additional safety margin

against unexpected voltage transients.

Product Applications 

• Robust High Voltage Termination

• Avalanche Energy Specified

• Source−to−Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• IDSS and VDS(on) Specified at Elevated Temperature

Product Description

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