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One stop electronic component supply Original FM38F16SAD-9MFD 4G bits DDR3(L) SDRAM DATA SHEET IC CHIP FBGA96
FM38F16SAD-9MFD-Double-data-rate architecture: two data transfers per clock cycle
Product Specifications
• Density: 4G bits
• Organization
— 128M word x4 bits x 8 banks
— 64M word x8 bits x 8banks
— 32M word x16 bits x 8 banks
• Package
— 78-ball FBGA(X4/X8)
— 96-ball FBGA(X16)
— Lead-free (RoHS compliant) and Halogen-free
• Power supply: 1.35V (typ) of 1600
— VDD = 1.283V to 1.45V
— Backward compatible for VDD, VDDQ= 1.5V ± 0.075V
• Power supply: 1.5V ± 0.075V (typ) of 1866
• Data rate
— 1600Mbps/1333 Mbps (1.35V)
— 1866 Mbps (1.5V)
• 1KB page size
— Row address: A0 to A15(X4/X8)
— Column address: A0 to A9,A11(X4)
Product Features
• Double-data-rate architecture: two data transfers per clock cycle
• The high-speed data transfer is realized by the 8 bits prefetch pipelined architecture
• Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver
• DQS is edge-aligned with data for READs; centeraligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK transitions
• Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
• Data mask (DM) for write data
• Posted /CAS by programmable additive latency for better command and data bus efficiency
• On-Die Termination (ODT) for better signal quality
— Synchronous ODT
— Dynamic ODT
• 2KB page size A0 to A9(X8)
— Row address: A0 to A14(X16)
— Column address: A0 to A9(X16)
• Eight internal banks for concurrent operation
• Burst length (BL): 8 and 4 with Burst Chop (BC)
• Burst type (BT):
— Sequential (8, 4 with BC)
— Interleave (8, 4 with BC)
• /CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11,13(1866)
• /CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11(1600/1333)
• /CAS Write Latency (CWL): 5, 6, 7, 8,9(1866)
• /CAS Write Latency (CWL): 5, 6, 7, 8(1600/1333)
• Precharge: auto precharge option for each burst access
• Driver strength: RZQ/7, RZQ/6 (RZQ = 240Ω)
• Refresh: auto-refresh, self-refresh
• Refresh cycles
— Average refresh period
7.8μs at 0°C ≤ TC ≤+85°C
3.9μs at +85°C < TC ≤+95°C
• Operating case temperature range
— TC = 0°C to +95°C
— Asynchronous ODT
• Multi Purpose Register (MPR) for pre-defined pattern
read out
• ZQ calibration for DQ drive and ODT
• Programmable Partial Array Self-Refresh (PASR)
• /RESET pin for Power-up sequence and reset function
• SRT range:
— Normal/extended
• Programmable Output driver impedance control
Specifications
Attribute | Attribute value |
ANSM-Part# | ANSM-FM38F16SAD-9MFD |
Type: | DDR3 |
Manufactor | Dosilicon |
DC | Standard |
Describe | NEW |
Supplier Device Packaging | FBGA96 |
Package | TRAY |
Density | 4Gb |
Voltage (V) | 1.5V |
Speed (MHz/CLK) | 933MHz |
Temp.Range | 0℃~95℃ |
Actual product photos
Product Data Book:
For more product information, please download the PDF
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