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One stop electronic component supply Original DS38E16SBB-8KFB 2Gb(128MX16) DDR3 SDRAM FLASH IC CHIP FBGA 96
DS38E16SBB-8KFB- Differential data strobe per byte of data(DQS/DQS#).
- DM masks write date at the both rising and falling edge of the data strobe
Product Features
- VDD/VDDQ = 1.50±0.075V
- 1.5V center-terminated push/pull I/O
- 8n-bit prefetch DDR architecture
- Differential clock inputs (CK, CK#)
- 8 internal banks
- Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
- Differential data strobe per byte of data(DQS/DQS#).
- DM masks write date at the both rising and falling edge of
the data strobe
- Programmable CAS READ latency (CL)
- Posted CAS additive latency
- Programmable CAS WRITE latency (CWL) based on tCK
- Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
- Selectable BC4 or BL8 on–the-fly (OTF)
- Self refresh mode
- Tc of 0℃ to +95℃
∙ 64ms, 8192 cycle refresh at 0℃ to +85℃
∙ 32ms, 8192 cycle refresh at 85℃ to +95℃
- Self refresh temperature (SRT)
- Automatic self refresh (ASR)
- Write leveling
- Multipurpose register
- Output driver calibration
• Configuration
- 128 Meg X 16 (16 Meg X 16 X 8 Banks).
• Timing – Cycle time
- 1.07ns @ CL = 13 (-9M)
- 1.25ns @ CL = 11 (-8K)
- 1.50ns @ CL = 9 (-6H)
- 1.87ns @ CL = 7 (-5F)
• Operating Temperature Ranges
- Commercial (0℃ to +95℃)
- Industrial (-40℃ to +95℃)
Specifications
Attribute | Attribute value |
ANSM-Part# | ANSM-DS38E16SBB-8KFB |
Type: | DDR3 |
Manufactor | Dosilicon |
DC | Standard |
Describe | NEW |
Supplier Device Packaging | FBGA96 |
Package | TRAY |
Density | 2Gb |
Voltage (V) | 1.5V |
Speed (MHz/CLK) | 800MHz |
Temp.Range | -40℃~95℃ |
Actual product photos
Product Data Book:
For more product information, please download the PDF
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