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Hot selling One stop supply of electronic components STGP10H60DF Trench gate field-stop IGBT H series 600V 10A high speed TO220
H Series 600 V 20 A Through Hole Silicon IGBT - TO-220-3
Product Descriptions
These devices are IGBTs developed using an advanced proprietary trench gate field stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Product Features
• High speed switching
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Short-circuit rated
• Ultrafast soft recovery antiparallel diode
Product Applications
• Motor control
• UPS
• PFC
Specifications
Attribute | Attribute value |
ANSM-Part# | ANSM-STGP10H60DF |
Category | Discrete Semiconductor Products |
Transistors | |
IGBTs | |
Single IGBTs | |
Mfr | STMicroelectronics |
Series | - |
Package | Tube |
Product Status | Active |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 600 V |
Current - Collector (Ic) (Max) | 20 A |
Current - Collector Pulsed (Icm) | 40 A |
Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 10A |
Power - Max | 115 W |
Switching Energy | 83µJ (on), 140µJ (off) |
Input Type | Standard |
Gate Charge | 57 nC |
Td (on/off) @ 25°C | 19.5ns/103ns |
Test Condition | 400V, 10A, 10Ohm, 15V |
Reverse Recovery Time (trr) | 107 ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220 |
Base Product Number | STGP10 |
Actual product photos
Product Data Book:
For more product information, please download the PDF
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