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Professional supply Integrated circuit IC JAN2N3811 Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole
Manufacturer Product Number
JAN2N3811
Description
Trans GP BJT PNP 60V 0.05A 350mW 6-Pin TO-78
Package Condition
bulk
Datasheet
Specifications
| Attribute | Attribute value |
| ANSM-Part# | ANSM-JAN2N3811 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| Bipolar (BJT) | |
| Bipolar Transistor Arrays | |
| Mfr | Microsemi Corporation |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| Transistor Type | 2 PNP (Dual) |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 5V |
| Power - Max | 350mW |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Grade | Military |
| Qualification | MIL-PRF-19500/336 |
| Mounting Type | Through Hole |
| Package / Case | TO-78-6 Metal Can |
| Supplier Device Package | TO-78-6 |
| Base Product Number | 2N3811 |
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Trans GP BJT PNP 60V 0.05A 350mW 6-Pin TO-78
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