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Hot sale original SI9945BDY-T1-GE3 MOSFET 2N-CH 60V 5.3A 8SOIC Mosfet Array 60V 5.3A 3.1W Surface Mount 8-SOIC
Manufacturer
Manufacturer Product Number
SI9945BDY-T1-GE3
Description
MOSFET 2N-CH 60V 5.3A 8SOIC Mosfet Array 60V 5.3A 3.1W Surface Mount 8-SOIC
Package Condition
original
Product Description
Vishay Siliconix SI9945BDY-T1-GE3
MOSFET 2N-CH 60V 5.3A 8SOIC Mosfet Array 60V 5.3A 3.1W Surface Mount 8-SOIC
|
ANSC PART# |
ANSC- SI9945BDY-T1-GE3 |
|
Part# |
SI9945BDY-T1-GE3 |
|
Type： |
Transistors |
|
Manufactor |
Vishay Siliconix |
|
DC |
new |
|
Package / Case |
8-SOIC |
|
Supplier Device Package |
Tape & Reel (TR)Cut Tape (CT) |
Product Attributes
| TYPE | DESCRIPTION |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| FET, MOSFET Arrays | |
| Mfr | Vishay Siliconix |
| Series | TrenchFET庐 |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| - | |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25掳C | 5.3A |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 4.3A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250碌A |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 665pF @ 15V |
| Power - Max | 3.1W |
| Operating Temperature | -55掳C ~ 150掳C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Base Product Number | SI9945 |
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MOSFET 2N-CH 60V 5.3A 8SOIC Mosfet Array 60V 5.3A 3.1W Surface Mount 8-SOIC
100In stock:
Can ship immediately