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JAN2N2906A TRANS PNP 60V 0.6A TO18 Bipolar (BJT) Transistor PNP 60 V

Manufacturer Product Number
JAN2N2906A
Description

TRANS PNP 60V 0.6A TO18 Bipolar (BJT) Transistor PNP 60 V 600 mA 500 mW Through Hole TO-18

Product Details

RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/291

Product Description

ANSC PART#

 ANSC- JAN2N2906A

Part#

JAN2N2906A

Type：

Transistors

Manufactor

Microchip Technology

DC

new

Product Attributes

TYPE

DESCRIPTION

Category

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

Mfr

Microchip Technology

Series

-

Packaging

Bulk

Part Status

Active

Transistor Type

PNP

Current - Collector (Ic) (Max)

600 mA

Voltage - Collector Emitter Breakdown (Max)

60 V

Vce Saturation (Max) @ Ib, Ic

1.6V @ 50mA, 500mA

Current - Collector Cutoff (Max)

50nA

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 150mA, 10V

Power - Max

500 mW

Frequency - Transition

-

Operating Temperature

-65°C ~ 200°C (TJ)

Grade

Military

Qualification

MIL-PRF-19500/291

Mounting Type

Through Hole

Package / Case

TO-206AA, TO-18-3 Metal Can

Supplier Device Package

TO-18

Base Product Number

2N2906

Actual image of the product                

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Product datasheet

For more information, please download

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Payment&Transportation

Official Certificate&Certificate

Standard packaging

Multiple product supply

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JAN2N2906A TRANS PNP 60V 0.6A TO18 Bipolar (BJT) Transistor PNP 60 V

TRANS PNP 60V 0.6A TO18 Bipolar (BJT) Transistor PNP 60 V 600 mA 500 mW Through Hole TO-18

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