Hot sale original electronics PTB20111 RF tubes PTB20111 85 Watts, 860-900 MHz Cellular Radio RF Power Transistor

Product Details

PTB20111 Product details

Description

The 20111 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc 

operation from 860 to 900 MHz. Rated at 85 watts minimum output power, it may be used for both

 CW and PEP applications. Ion implantation, nitride surface passivation and

 gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.

• 25 Volt, 860–900 MHz Characteristics

   - Output Power = 85 Watts

   - Collector Efficiency = 50% at 85 Watts

   - IMD = -30 dBc Max at 60 W(PEP)

• Class AB Characteristics

• Gold Metallization

• Silicon Nitride Passivated

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