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Hot sale original electronics Toshiba Semiconductor TK10A80E Silicon N-Channel MOSFET
Toshiba Semiconductor TK10A80E Silicon N-Channel MOSFET
Product Details
TK10A80E : MOSFETs Silicon N-Channel MOS (π-MOS)
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit
1: Gate 2: Drain 3: Source
TO-220SIS Start of commercial production 1 2013-10 2014-03-04 Rev.3.0
Product Description
ANSC PART# |
ANSC- TK10A80E |
Part# |
TK10A80E |
Type: |
Electronic components |
Manufactor |
Original |
DC |
new |
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Product datasheet
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