Hot sale original SKM200GAL12E4 Insulated Gate Bipolar Transistor 314A I(C) 1200V V(BR)CES N-Channel CASE D56 SEMITRANS-7

Product Details

Brief Description: The SKM200GAL12E4 is a high-power insulated-gate bipolar transistor (IGBT) module from Semikron, 

designed for high-voltage and high-current applications. 

It features a maximum collector-emitter voltage of 1200V and a maximum continuous collector current of 314A.

Features:

Maximum collector-emitter voltage: 1200V

Typical collector-emitter saturation voltage: 1.8V

Maximum gate-emitter voltage: ±20V

Maximum continuous collector current: 314A

Minimum operating temperature: -40°C

Maximum operating temperature: 175°C

Automotive grade: No

Pin count: 5

Package type: Case GAL

Mounting type: Screw

Package dimensions: 30.5mm x 106.4mm x 61.4mm

PCB changes: 5

RoHS compliance: Yes

ECCN (US): EAR99

Part status: Active

Channel type: N

Configuration: Single

Application Grade: The SKM200GAL12E4 is a general-purpose IGBT module suitable for a wide range of applications,

 including industrial, commercial, and residential power systems.

Applications: 

The SKM200GAL12E4 is designed for high-power applications that require high-voltage and high-current capabilities. 

Some potential applications include:

Power supplies and inverters

Motor drives and control systems

Renewable energy systems (solar and wind)

Industrial automation and control systems

Commercial and residential power systems

Overall, the SKM200GAL12E4 is a high-performance IGBT module that offers excellent reliability and durability, 

making it an ideal choice for a wide range of power electronic applications.

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