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Hot sale original electronics RFM10N12 N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS GE Solid State
Manufacturer
Manufacturer Product Number
RFM10N12
Description
RFM10N12 N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS GE Solid State
Product Details
RFM10N12 Product details
N-Channel Enhancement-Mode Power Field-Effect Transistors
Features
■ SOA is power-dissipation limited
■ Nanosecond switching speeds
■ Linear transfer characteristics
■ High input impedance
■ Majority carrier devic
Product Description
|
ANSC PART# |
ANSC- RFM10N12 |
|
Part# |
RFM10N12 |
|
Type： |
Integrated Circuits |
|
Manufactor |
GESS [GE Solid State] |
|
DC |
new |
Actual image of the product
Product datasheet
For more information, please download
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RFM10N12 N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS GE Solid State
1000In stock:
Can ship immediately