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Hot sale original electronics RFM10N12 N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS GE Solid State

Manufacturer
Original
Manufacturer Product Number
RFM10N12
Description

RFM10N12 N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS GE Solid State

Product Details

RFM10N12 Product details

N-Channel Enhancement-Mode Power Field-Effect Transistors

Features

■ SOA is power-dissipation limited

■ Nanosecond switching speeds

■ Linear transfer characteristics

■ High input impedance

■ Majority carrier devic

Product Description

ANSC PART#

 ANSC- RFM10N12

Part#

RFM10N12

Type：

Integrated Circuits

Manufactor

GESS [GE Solid State]

DC

new

Actual image of the product                

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Product datasheet

For more information, please download

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Standard packaging

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Hot sale original electronics RFM10N12 N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS GE Solid State

RFM10N12 N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS GE Solid State

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