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Hot sale original electronics MITSUBISHI IC MGFC40V6472 6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET

Manufacturer
Manufacturer Product Number
MGFC40V6472
Description

 MITSUBISHI [Mitsubishi Electric Semiconductor]  MGFC40V6472 6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET

Product Details

DESCRIPTION

The MGFC40V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES

   Internally matched to 50 ohm system

   High output power

      P1dB = 10W (TYP.) @ f=6.4 - 7.2 GHz

   High power gain

      GLP =9 dB (TYP.) @ f=6.4 - 7.2 GHz

   High power added efficiency

      P.A.E. = 32 % (TYP.) @ f=6.4 - 7.2 GHz

   Low Distortion[Item-51]

      IM3=-45 dBc(TYP.)@Po=29 dBm S.C.L.

APPLICATION

   item 01 : 6.4 - 7.2 GHz band power amplifier

   item 51 : 6.4 - 7.2 GHz band digital radio communication

Product Description

ANSC PART#

 ANSC- MGFC40V6472

Part#

MGFC40V6472

Type:

Electronic components

Manufactor

Mitsubishi Materials

DC

new

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Hot sale original electronics MITSUBISHI IC MGFC40V6472 6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET

 MITSUBISHI [Mitsubishi Electric Semiconductor]  MGFC40V6472 6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET

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