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Hot sale Original MGFC40V6472 RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel

Manufacturer Product Number
MGFC40V6472
Description

MGFC40V6472 RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC

Package Condition
Original
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Product Details

DESCRIPTION
The MGFC40V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Internally matched to 50 ohm system
High output power
P1dB = 10W (TYP.) @ f=6.4 - 7.2 GHz
High power gain
GLP =9 dB (TYP.) @ f=6.4 - 7.2 GHz
High power added efficiency
P.A.E. = 32 % (TYP.) @ f=6.4 - 7.2 GHz
Low Distortion[Item-51]
IM3=-45 dBc(TYP.)@Po=29 dBm S.C.L.
APPLICATION
item 01 : 6.4 - 7.2 GHz band power amplifier
item 51 : 6.4 - 7.2 GHz band digital radio communication

Product Description

Type# Description
ANSC PART# ANSC- MGFC40V6472
Ihs Manufacturer Original
Package Description FLANGE MOUNT, R-CDFM-F2
Pin Count 2
Additional Feature HIGH RELIABILITY
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 10 V
Drain Current-Max (ID) 2.4 A
FET Technology JUNCTION
Highest Frequency Band C BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Mode DEPLETION MODE
Operating Temperature-Max 175 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 43 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

Product Photos

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Product datasheet 

For more information, please download

 

MGFC40V6472-1

 

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Hot sale Original MGFC40V6472 RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel

MGFC40V6472 RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC

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