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You can contact me for the best price New Original Integrated Circuit 10N120BND In Stock hot
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
10N120BND Product details
The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design.
This is a new member of the MOS gated high voltage switching IGBT family.
IGBTs combine the best features of MOSFETs and bipolar transistors.
This device has the high input impedance of a MOSFET and the low on state conduction loss of a bipolar transistor.
The IGBT used is the development type TA49290.
The Diode used is the development type TA49189.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies
where low conduction losses are essential, such as: AC and DC motor controls,
power supplies and drivers for solenoids, relays and contactors.
Features
• 35A, 1200V, TC = 25°C
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
Product Description
ANSC PART# |
ANSC- 10N120BND |
Part# |
10N120BND |
Type: |
Electronic components |
Manufactor |
Original |
DC |
new |
Product datasheet
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