NAND02GR3B2DZA6F 2-Gbit, 2112-byte/1056-word pagemultiplane architecture, 1.8 V or 3 V, NAND flash memories chip

Product Descriptions

The NAND02G-B2D devices are part of the NAND flash 2112-byte/1056-word page family  of non-volatile flash memories. They use NAND cell technology and have a density of  2 Gbits. 

These devices have a memory array that is split into 2 planes of 1024 blocks each. This  multiplane architecture makes it possible to program 2 pages at a time (one in each plane),  or to erase 2 blocks at a time (one in each plane). This feature reduces the average program  and erase times by 50 percent.

The NAND02G-B2D devices operate from a 1.8 V or 3 V voltage supply. Depending on  whether the device has a x8 or x16 bus width, the page size is 2112 bytes (2048 + 64 spare)  or 1056 words (1024 + 32 spare), respectively. 

The address lines are multiplexed with the data input/output signals on a multiplexed x 8  input/output bus. This interface reduces the pin count and makes it possible to migrate to  other densities without changing the footprint. 

Each block can be programmed and erased over 100,000 cycles with ECC (error correction  code) on. To extend the lifetime of NAND flash devices, the implementation of an ECC is  mandatory.

A write protect pin is available to provide hardware protection against program and erase  operations.

Product Features

■ High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage  applications 

■ NAND interface – x8 or x16 bus width – Multiplexed address/data 

■ Supply voltage: 1.8 V or 3.0 V device 

■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words 

■ Block size – x8 device: (128 K + 4 K spare) bytes – x16 device: (64 K + 2 K spare) words 

■ Multiplane architecture – Array split into two independent planes – Program/erase operations can be  performed on both planes at the same time 

■ Page read/program – Random access: 25 µs (max) – Sequential access: 25 ns (min) – Page program time: 200 µs (typ) – Multiplane page program time (2 pages):  200 µs (typ) 

■ Copy back program with automatic EDC (error  detection code) 

■ Cache read mode 

■ Fast block erase – Block erase time: 1.5 ms (typ) – Multiblock erase time (2 blocks): 1.5 ms  (typ)

■ Status register 

■ Electronic signature 

■ Chip Enable ‘don’t care’ 

■ Serial number option 

■ Data protection: – Hardware program/erase disabled during  power transitions – Non-volatile protection option 

■ ONFI 1.0 compliant command set 

■ Data integrity – 100,000 program/erase cycles (with ECC) – 10 years data retention 

■ ECOPACK® packages

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