One stop electronic component supply Original DS35M12B-IB 3.3V/1.8V x1/x2/x4 512M-bit SPI NAND FLASH IC CHIP WSON8

Product Descriptions

DS35X12BXXX is a 64Mx8bit with spare 4Mx8 bit capacity. 

The device is offered in 3.3/1.8 Vcc Power Supply, and with SPI interface.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.

The device contains 512 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells. Program operation allows the 2176-byte page writing in typical 300us and an erase operation can be performed in typical 2 ms on a 128K-byte block. Data in the page can be read out at 10ns cycle time per word (3.3V version), and at 12ns cycle time per word (1.8V version). The on-chip Program/Erase Controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.

An internal 8-bit ECC logic is implemented in the chip, which is enabled by default. The internal ECC can be disabled or enabled again by command. When the internal 8-bit ECC logic is disabled, the host side needs to handle the 8-bit ECC by host micro controller.

The serial peripheral interface (SPI) provides NAND Flash with a cost-effective non-volatile memory storage solution in systems where pin count must be kept to a minimum. It is also an alternative to SPI-NOR, offering superior write performance and cost per bit over SPI-NOR.

Product Features

■ Serial Peripheral Interface

－ Mode 0 and Mode 3

■ Standard, Dual, Quad SPI

－ Standard SPI: SCLK, CS#, SI, SO 

－ Dual SPI: SCLK, CS#, SIO0, SIO1

－ Quad SPI: SCLK, CS#, SIO0, SIO1, SIO2, SIO3

■ SUPPLY VOLTAGE

－ VCC = 1.8/3.3 Volt core supply voltage for 

Program, Erase and Read operations

■ PAGE READ / PROGRAM

－ (2048+128 spare) byte

－ Random access: 25us (w/o ECC), 

130us(w/ ECC)

－ Serial access: 83MHz (1.8V)

104MHz (3.3V)

－ Page program time: 300us (Typ)

■ FAST BLOCK ERASE

－ Block size: (128K + 8K) bytes 

－ Block erase time: 2ms (Typ)

■ MEMORY CELL ARRAY

－ (2K + 128) bytes x 64 pages x 512 blocks

■ ELECTRONIC SIGNATURE

－ Manufacturer Code

－ Device Code

■ STATUS REGISTER

■ HARDWARE DATA PROTECTION

－ Enable/Disable protection with WP# Pin

－ Top or Bottom, Block selection combination

■ DATA RETENTION

－ Max cycling: 60K Program / Erase cycles

－ Data retention: 10 Years (8bit/512byte ECC)

－ Internal ECC can be enabled (8bit ECC)

－ Block zero is a valid block and will be valid for at 

least 1K program-erase cycles with ECC

  Specifications

Actual product photos

Product Data Book：

For more product information, please download the PDF

Payment&Transportation

Official Certificate&Certificate

Multiple product supply

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Standard packaging

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