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One stop electronic component supply Original FMN1ET1TCB-25IH Stacked Multi-Chip Product 1.8V NAND Flash Memory and MobileDDR2

Manufacturer Product Number
FMN1ET1TCB-25IH
Description

FMN1ET1TCB-25IH-Multiplexed, double data rate, command/addressinputs; 

commands entered on every CK edge

- Bidirectional/differential data strobe per byte of 

data(DQS/DQS#).

Package Condition
Tray

Product Features

1. MCP Features • Package Type :

- 121-ball FBGA, 8.0x8.0mm2, 0.86T, 0.5mm Ball Pitch

- 162-ball FBGA, 11.5x13.0mm2, 1.0T, 0.5mm Ball Pitch

- 162-ball FBGA, 8.0x10.5mm2, 1.0T, 0.5mm Ball Pitch

- Lead & Halogen Free

• Operating Temperature Range

- Industrial Part : -40°C ~ 85°C

 NAND

• x8/x16 I/O BUS

— NAND Interface

— ADDRESS / DATA Multiplexing

• SUPPLY VOLTAGE

— VCC = 1.8 Volt core supply voltage

for Program, Erase and Read operations

• MEMORY CELL ARRAY

— x8 : (2K + 64) bytes x 64 pages x 1024 blocks

— x16: (1K + 32) words x 64 pages x 1024 blocks

• PAGE READ / PROGRAM

— Synchronous Page Read Operation

— Random access : 25us (Max)

— Serial access : 45ns (1.8V)

— Page program time : 200us (Typ)

• ELECTRONIC SIGNATURE

— Manufacturer Code

— Device Code

• DATA RETENTION

— Cycling: 100K Program / Erase cycles

— Data retention: 10 Years(4bit/512byte ECC)

— Block zero is a valid block and will be valid for at

least 1K program-erase cycles with ECC

 DRAM

- VDD2 = 1.14–1.30V

- VDDCA/VDDQ = 1.14–1.30V

- VDD1 = 1.70–1.95V

- Interface : HSUL_12

- Data width : x16

- Clock frequency : 400 MHz

- Four-bit pre-fetch DDR architecture

- Eight internal banks for concurrent operation

- Multiplexed, double data rate, command/addressinputs; 

commands entered on every CK edge

- Bidirectional/differential data strobe per byte of 

data(DQS/DQS#).

- DM masks write date at the both rising and falling edge 

of the data strobe

- Programmable READ and WRITE latencies (RL/WL)

- Programmable burst lengths: 4, 8, or 16

- Auto refresh and self refresh supported

- All bank auto refresh and per bank auto refresh supported

- Clock stop capability

• Low Power Features

- Low voltage power supply.

- Auto TCSR (Temperature Compensated Self Refresh).

- PASR (Partial Array Self Refresh) power-saving mode.

- DPD (Deep Power Down) Mode.

- DS (Driver Strength) Control.

  Specifications

Attribute Attribute value
ANSM-Part# ANSM-FMN1ET1TCB-25IH
Type: LPDDR2
Manufactor Dosilicon
DC Standard
Describe NEW
Supplier Device Packaging FBGA162
Package TRAY
Density 1Gb
Voltage (V) 1.8
Speed (MHz/CLK) 400MHz
Temp.Range -40℃~85℃

Actual product photos

FBGA162

Product Data Book:

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For more product information, please download the PDF

Payment&Transportation

详情8.1

Official Certificate&Certificate

详情页3.1

Multiple product supply

详情5.1

Company office environment

详情6.1

Warehouse Real Shot

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Standard packaging

详情9

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Write your review

One stop electronic component supply Original FMN1ET1TCB-25IH Stacked Multi-Chip Product 1.8V NAND Flash Memory and MobileDDR2

FMN1ET1TCB-25IH-Multiplexed, double data rate, command/addressinputs; 

commands entered on every CK edge

- Bidirectional/differential data strobe per byte of 

data(DQS/DQS#).

Write your review

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