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One stop electronic component supply Original FMN4ET2TCB-25IH Stacked Multi-Chip Product 1.8V NAND Flash Memory and Mobile DDR2
FMN4ET2TCB-25IH-Multiplexed, double data rate, command/address inputs;
commands entered on every CK edge
- Bidirectional/differential data strobe per byte of
data(DQS/DQS#).
Product Features
1. MCP Features
• Operating Temperature Range
- Industrial Part : - 40°C ~ 85°C
• Package Type :
- 162-ball FBGA, 11.5x13.0mm2, 1.0T, 0.5mm Ball Pitch
- 162-ball FBGA, 8.0x10.5mm2, 1.0T, 0.5mm Ball Pitch
- Lead & Halogen Free
NAND
• Architecture (4G bits)
- Input / Output Bus Width: 8-bits / 16-bits
- Page size
X 8 : (2K+64spare) bytes (@1.8V)
X16 : (1K+32spare) words (@1.8V)
– Block size
X8 : (128K+4K) bytes
X16 : (64K+2K) words
– Plane Size: 2048 Blocks
– Device Size: 2 Planes per Device
• Page Read / Program
- Random Read Time (tR): 25 μs (Max)
- Sequential Access Time: 45 ns (Min)
- Page Program: 200 μs (Typ)
• Block Erase / Multi-plane Erase
- Block Erase time: 2ms (Typ)
• Security
- OTP area
- Serial Number (unique ID)
• Supply Voltage
- 1.8V device: VCC = 1.7V ~ 1.95V
• Reliability
- 100,000 Program / Erase cycles
(with 4-bit ECC per 528 bytes)
- 10 Year Data retention
DRAM
- VDD2 = 1.14–1.30V
- VDDCA/VDDQ = 1.14–1.30V
- VDD1 = 1.70–1.95V
- Interface : HSUL_12
- Data width : x16, x32
- Clock frequency : 400Mhz
- Four-bit pre-fetch DDR architecture
- Eight internal banks for concurrent operation
- Multiplexed, double data rate, command/address inputs;
commands entered on every CK edge
- Bidirectional/differential data strobe per byte of
data(DQS/DQS#).
- DM masks write date at the both rising and falling edge
of the data strobe
- Programmable READ and WRITE latencies (RL/WL)
- Programmable burst lengths: 4, 8, or 16
- Auto refresh and self refresh supported
- All bank auto refresh and per bank auto refresh supported
- Clock stop capability
• Low Power Features
- Low voltage power supply.
- Auto TCSR (Temperature Compensated Self Refresh).
- PASR (Partial Array Self Refresh) power-saving mode.
- DPD (Deep Power Down) Mode.
- DS (Driver Strength) Control.
Specifications
Attribute | Attribute value |
ANSM-Part# | ANSM-FMN4ET2TCB-25IH |
Type: | LPDDR2 |
Manufactor | Dosilicon |
DC | Standard |
Describe | NEW |
Supplier Device Packaging | FBGA162 |
Package | TRAY |
Density | 4Gb |
Voltage (V) | 1.8 |
Speed (MHz/CLK) | 400MHz |
Temp.Range | -40℃~85℃ |
Actual product photos
Product Data Book:
For more product information, please download the PDF
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