Hot selling product original stock FMND4G08S3B-A2D 3V/1.8V, x8/x16 4G-BIT NAND FLASH IC CHIP VFBGA63

Product Features

■ x8/x16 I/O BUS

－ NAND Interface

－ ADDRESS / DATA Multiplexing

■ SUPPLY VOLTAGE

－ VCC = 1.8/2.7/3.3 Volt core supply voltage for Program, 

Erase and Read operations

■ PAGE READ / PROGRAM

－ x8 : (2048+64 spare) byte

－ x16: (1024+32 spare) word page

－ Synchronous Page Read Operation

－ Random access : 25us (Max)

－ Serial access : 30ns(85°C)/45ns(105°C) (1.8V)

 20ns(85°C)/25ns(105°C) (2.7/3.0V)

－ Page program time : 200us (Typ)

■ PAGE COPY BACK

－ Fast data copy without external buffering

■ CACHE PROGRAM

－ Internal buffer to improve the program throughput

■ READ CACHE

■ LEGACY/ONFI 1.0 COMMAND SET

■ FAST BLOCK ERASE

－ Block size :

x8 : (128K + 4K) bytes 

x16: (64K+2K) words

－ Block erase time : 2ms (Typ)

■ MEMORY CELL ARRAY

－ x8 : (2K + 64) bytes x 64 pages x 4096 blocks

－ x16: (1K + 32) words x 64 pages x 4096 blocks

■ ELECTRONIC SIGNATURE

－ Manufacturer Code

－ Device Code

■ STATUS REGISTER

■ HARDWARE DATA PROTECTION

■ DATA RETENTION

－ 100K Program / Erase cycles

－ Data retention : 10 Years(4bit/512byte ECC)

－ Block zero is a valid block and will be valid for at least 

1K program-erase cycles with ECC

  Specifications

Actual product photos

Product Data Book：

For more product information, please download the PDF

Payment&Transportation

Official Certificate&Certificate

Multiple product supply

Company office environment

Warehouse Real Shot

Standard packaging

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