Hot-selling and scarce AS4C32M16MD1A-5BCN SDRAM - Mobile LPDDR Memory IC 60FBGA spot stock

Product Descriptions

This AS4C32M16MD1A-5BCN  is 536,870,912 bits synchronous double data rate Dynamic RAM .Each 134,217,728 bits bank isorganized as 8,192 rows by 1024 columns by 16 bits fabricated with Alliance Memory’s high performance CMOS technology .Thisdevice uses a double data rate architecture to achieve high -speed operation .The double data rate architecture is essentially a 2nprefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O balls .Range of operatingfrequencies,programmable burst lengths and programmable latencies allow the same device to be useful for a variety of highbandwidth and high performance memory system applications .

Product Features

•VDD/VDDQ =1.7~1 .95V

•Data width:x16

•Clock rate :200MHz

•Partial Array Self-Refresh(PASR)

•Auto Temperature Compensated Self-Refresh(ATCSR)

•Power Down Mode

•Deep Power Down Mode (DPD Mode)

•Programmable output buffer driver strength

•Four internal banks for concurrent operation

•Data mask (DM)for write data

•Clock Stop capability during idle periods

•Auto Pre-charge option for each burst access

•Double data rate for data output  

•Differential clock inputs (CK and CK )

•Bidirectional,data strobe (DQS)

•PKG Type

 CAS Latency:2 and 3

Burst Length:2,4,8 and 16

Burst Type:Sequential or Interleave

64 ms Refresh period

Interface:LVCMOS

 Operating Temperature Range Extended  (-30°C  to  +85°C)

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Product Specifications

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