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Hot sale Original STI24NM60N MOSFET N CH 600V 17A I2PAK N-Channel 600 V 17A (Tc) 125W (Tc) Through Hole

Manufacturer Product Number
STI24NM60N
Description

STI24NM60N MOSFET N CH 600V 17A I2PAK N-Channel 600 V 17A (Tc) 125W (Tc) Through Hole I2PAK

Package Condition
original
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Product Details

Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications

Product Description

Type Description
ANSC PART# ANSC - STI24NM60N
Category Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr Original
Series MDmesh™ II
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 50 V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number STI24

Actual image of the product 

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Product datasheet 

For more information, please download

 

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Hot sale Original STI24NM60N MOSFET N CH 600V 17A I2PAK N-Channel 600 V 17A (Tc) 125W (Tc) Through Hole

STI24NM60N MOSFET N CH 600V 17A I2PAK N-Channel 600 V 17A (Tc) 125W (Tc) Through Hole I2PAK

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