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Hot sale Original SI3459BDV-T1-GE3 Transistor MOSFET P-CH 60V 2.9A P-Channel 60 V 2.9A (Tc) 2W (Ta) 3.3W (Tc) Surface Mount
Manufacturer
Manufacturer Product Number
SI3459BDV-T1-GE3
Description
Original SI3459BDV-T1-GE3 Transistor
Package Condition
Tape & Reel (TR) Cut Tape (CT)
Product Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 350pF @ 30V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -2.2A.0.0022A is the drain current of this device, which is the maximum continuous current transistor can carry.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-3V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.
Product Features
a continuous drain current (ID) of -2.2A
a threshold voltage of -3V
a 60V drain to source voltage (Vdss)
Product Applications
SI3459BDV-T1-GE3 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Product Description
|
Type |
Description |
|---|---|
|
ANSC PART# |
ANSC - SI3459BDV-T1-GE3 |
|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
|
Mfr |
Original |
|
Series |
TrenchFET® |
|
Packaging |
Tape & Reel (TR) Cut Tape (CT) |
|
Part Status |
Active |
|
FET Type |
P-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
60 V |
|
Current - Continuous Drain (Id) @ 25°C |
2.9A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
|
Rds On (Max) @ Id, Vgs |
216mOhm @ 2.2A, 10V |
|
Vgs(th) (Max) @ Id |
3V @ 250µA |
|
Gate Charge (Qg) (Max) @ Vgs |
12 nC @ 10 V |
|
Vgs (Max) |
±20V |
|
Input Capacitance (Ciss) (Max) @ Vds |
350 pF @ 30 V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
2W (Ta), 3.3W (Tc) |
|
Operating Temperature |
-55°C ~ 150°C (TJ) |
|
Mounting Type |
Surface Mount |
|
Supplier Device Package |
6-TSOP |
|
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
|
Base Product Number |
SI3459 |
Actual image of the product
Product datasheet
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Original SI3459BDV-T1-GE3 Transistor
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