Hot sale Original SI3459BDV-T1-GE3 Transistor MOSFET P-CH 60V 2.9A P-Channel 60 V 2.9A (Tc) 2W (Ta) 3.3W (Tc) Surface Mount

Product Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 350pF @ 30V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -2.2A.0.0022A is the drain current of this device, which is the maximum continuous current transistor can carry.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-3V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.

Product Features  

a continuous drain current (ID) of -2.2A

a threshold voltage of -3V
a 60V drain to source voltage (Vdss)

Product Applications

SI3459BDV-T1-GE3 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

 Product Description 

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Product datasheet

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