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Exact specifications should be obtained from the product data sheet.

Hot sale Original JAN2N2920 TRANS 2NPN 60V 30MA TO-78-6 Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V

Manufacturer Product Number
JAN2N2920
Description

JAN2N2920 TRANS 2NPN 60V 30MA TO-78-6 Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 30mA 350mW Through Hole TO-78-6

Package Condition
Bulk
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Product Details

Transistor

PNP Silicon Epitaxial

Features

• MIL−PRF−19500/290 Qualified

• Available as JAN, JANTX, and JANTXV

• Hermetically Sealed Commercial Product with Option for Military

Temperature Range Screening

Product Description

Type Description
ANSC PART# ANSC - JAN2N2920
Category Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
Manufacturer Original
Series -
Packaging Bulk
Part Status Active
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 30mA
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1mA, 5V
Power - Max 350mW
Frequency - Transition -
Operating Temperature -65°C ~ 200°C (TJ)
Grade Military
Qualification MIL-PRF-19500/355
Mounting Type Through Hole
Package / Case TO-78-6 Metal Can
Supplier Device Package TO-78-6
Base Product Number 2N2920

Actual image of the product 

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​Product datasheet 

For more information, please download

   

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2

Standard packaging

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Hot sale Original JAN2N2920 TRANS 2NPN 60V 30MA TO-78-6 Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V

JAN2N2920 TRANS 2NPN 60V 30MA TO-78-6 Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 30mA 350mW Through Hole TO-78-6

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