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Original FDL100N50F N-Channel 500 V 100A (Tc) 2500W (Tc) Through Hole TO-264-3 MOSFET N-CH 500V 100A TO264-3
FDL100N50F N-Channel 500 V 100A (Tc) 2500W (Tc) Through Hole TO-264-3 MOSFET N-CH 500V 100A TO264-3
Product Details
Features
• RDS(on) = 43 m (Typ.) @ VGS = 10 V, ID = 50 A
• Low Gate Charge (Typ. 238 nC)
• Low Crss (Typ. 64 pF)
• 100 Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Applications
• Uninterruptible Power Supply
• AC−DC Power Supply
Product Description
ANSC PART# |
ANSC- FDL100N50F |
Part# |
FDL100N50F |
Type: |
Electronic components |
Manufactor |
ON |
DC |
new |
Product Attributes
MOSFET N-CH 500V 100A TO264-3
TYPE |
DESCRIPTION |
Category |
Discrete Semiconductor Products |
Transistors |
|
FETs, MOSFETs |
|
Single FETs, MOSFETs |
|
Mfr |
onsemi |
Series |
UniFET邃「 |
Packaging |
Tube |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
500 V |
Current - Continuous Drain (Id) @ 25ツーC |
100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
55mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id |
5V @ 250ツオA |
Gate Charge (Qg) (Max) @ Vgs |
238 nC @ 10 V |
Vgs (Max) |
ツア30V |
Input Capacitance (Ciss) (Max) @ Vds |
12000 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
2500W (Tc) |
Operating Temperature |
-55ツーC ~ 150ツーC (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-264-3 |
Package / Case |
TO-264-3, TO-264AA |
Base Product Number |
FDL100 |
Actual image of the product
Product datasheet
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