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Hot sale Original FQP12P20 Transistor Single FET MOSFET P-CH 200V 11.5A TO220-3 P-Channel 200 V 11.5A 120W (Tc) Through Hole
Original FQP12P20 Transistor Single FET MOSFET P-CH 200V 11.5A TO220-3 P-Channel 200 V 11.5A (Tc) 120W (Tc) Through Hole TO-220-3
Product Overview
This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Product Applications
Other Audio & Video
Product Features
-11.5A, -200V, RDS(on) = 470mΩ(Max.) @VGS = -10 V, ID = -5.75A
Low gate charge ( Typ. 31nC)
Low Crss ( Typ. 30pF)
100% avalanche tested
Product Description
Type |
Description |
---|---|
ANSC PART# |
ANSC - FQP12P20 |
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
Mfr |
- |
Series |
QFET® |
Packaging |
Tube |
Part Status |
Obsolete |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
200 V |
Current - Continuous Drain (Id) @ 25°C |
11.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
470mOhm @ 5.75A, 10V |
Vgs(th) (Max) @ Id |
5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
40 nC @ 10 V |
Vgs (Max) |
±30V |
Input Capacitance (Ciss) (Max) @ Vds |
1200 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
120W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-220-3 |
Package / Case |
TO-220-3 |
Base Product Number |
FQP12 |
Actual image of the product
Product datasheet
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