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Hot sale Original 2N6788 Power Field-Effect Transistor, 6A I(D) 100V 0.35ohm 1-Element N-Channel Silicon TO-39 3PIN

Manufacturer
Manufacturer Product Number
2N6788
Description

2N6788 Power Field-Effect Transistor, 6A I(D) 100V 0.35ohm 1-Element N-Channel Silicon TO-39 3PIN

Package Condition
Original
Datasheet
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Product Overview 

The drain current is the maximum continuous current the device can conduct, and this device has 6A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 6A.Peak drain current is 24A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 40 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 100V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).

Product Features  

a continuous drain current (ID) of 6A
based on its rated peak drain current 24A.
a 100V drain to source voltage (Vdss)

Product Applications

2N6788 applications of single MOSFETs transistors.

  • AC-DC Power Supply

  • Synchronous Rectification for ATX 1 Server I Telecom PSU

  • Motor drives and Uninterruptible Power Supplies

  • Micro Solar Inverter

  • DC/DC converters

  • Power Tools

  • Motor Drives and Uninterruptible Power Supples

  • Synchronous Rectification

  • Battery Protection Circuit

  • Telecom 1 Sever Power Supplies

Product Description

Type# Description
ANSC PART# ANSC - 2N6788
Manufacturer /
Package Description HERMETIC SEALED, FORMERLY TO-39, 3 PIN
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.35 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 20 W
Pulsed Drain Current-Max (IDM) 24 A
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Element Material SILICON

Actual image of the product 

2N6788

Product datasheet 

For more information, please download

   

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Hot sale Original 2N6788 Power Field-Effect Transistor, 6A I(D) 100V 0.35ohm 1-Element N-Channel Silicon TO-39 3PIN

2N6788 Power Field-Effect Transistor, 6A I(D) 100V 0.35ohm 1-Element N-Channel Silicon TO-39 3PIN

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