Hot sale original SI5435BDC-T1-E3 MOSFET P-CH 30V 4.3A 1206-8 P-Channel 30 V 4.3A (Ta) 1.3W (Ta) Surface Mount

Product Overview 

The drain current is the maximum continuous current the device can conduct, and this device has -5.9A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.This device has a drain-to-source resistance of 45mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 30V is required between drain and source (Vdss).

Product Features  

a continuous drain current (ID) of -5.9A
a drain-to-source breakdown voltage of 30V voltage
single MOSFETs transistor is 45mOhm
a 30V drain to source voltage (Vdss)

Product Applications

SI5435BDC-T1-E3 applications of single MOSFETs transistors.

· AC-DC Power Supply

· Synchronous Rectification for ATX 1 Server I Telecom PSU

· Motor drives and Uninterruptible Power Supplies

· Micro Solar Inverter

· DC/DC converters

· Power Tools

· Motor Drives and Uninterruptible Power Supples

· Synchronous Rectification

· Battery Protection Circuit

· Telecom 1 Sever Power Supplies

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