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Hot sale original electronics IXYS IXFH70N15 MOSFET N-CH 150V 70A TO247AD N-Channel 150 V 70A (Tc) 300W (Tc)
IXYS IXFH70N15 MOSFET N-CH 150V 70A TO247AD N-Channel 150 V 70A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)
Product Details
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Features
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Advantages
• Easy to mount
• Space savings
• High power density
Product Description
ANSC PART# |
ANSC- IXFH70N15 |
Part# |
IXFH70N15 |
Type: |
Electronic components |
Manufactor |
IXYS |
DC |
new |
Actual image of the product
Product Attributes
TYPE |
DESCRIPTION |
---|---|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
Mfr |
IXYS |
Series |
HiPerFET™ |
Packaging |
Tube |
Part Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
150 V |
Current - Continuous Drain (Id) @ 25°C |
70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
28mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id |
4V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs |
180 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
3600 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
300W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-247AD (IXFH) |
Package / Case |
TO-247-3 |
Base Product Number |
IXFH70 |
Product datasheet
For more information, please download
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