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Exact specifications should be obtained from the product data sheet.
Product Descriptions
The ASI TH430 is Designed for SSB ad VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability.
Product Features
PG = 14.5 dB min. at 220 W/30 MHz
IMD = -30 dB max.
Omnigold™ Metalization System
Specifications
| Attribute | Attribute value |
| Product name | ANSM-TH430D |
| Product Category: | RF Bipolar Transistors |
| Transistor Type: | Bipolar Power |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Operating Frequency: | 30 MHz |
| DC Collector/Base Gain hfe Min: | 15 |
| Collector- Emitter Voltage VCEO Max: | 55 V |
| Emitter- Base Voltage VEBO: | 4 V |
| Continuous Collector Current: | 40 A |
| Minimum Operating Temperature: | - 65 C |
| Maximum Operating Temperature: | + 200 C |
| Mounting Style: | Screw Mount |
| Package / Case: | M177 |
| Packaging: | Tray |
| Pd - Power Dissipation: | 330 W |
| Product Type: | RF Bipolar Transistors |
| Factory Pack Quantity: | 1 |
| Subcategory: | Transistors |
| Type: | RF Bipolar Power |
| Unit Weight: | 0.723969 oz |
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