Hot selling TH430D TH430 high-frequency tube RF tube microwave transistor TO-59 quality assurance

Manufacturer Product Number

TH430D

Description

RF Bipolar Transistors RF Transistor

Package Condition

original

Datasheet

TH430D

Product Details
Reviews

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Product Descriptions

The ASI TH430 is Designed for SSB ad VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability.

Product Features

 PG = 14.5 dB min. at 220 W/30 MHz

 IMD = -30 dB max.

 Omnigold™ Metalization System

Specifications

Attribute	Attribute value
Product name	ANSM-TH430D
Product Category:	RF Bipolar Transistors
Transistor Type:	Bipolar Power
Technology:	Si
Transistor Polarity:	NPN
Operating Frequency:	30 MHz
DC Collector/Base Gain hfe Min:	15
Collector- Emitter Voltage VCEO Max:	55 V
Emitter- Base Voltage VEBO:	4 V
Continuous Collector Current:	40 A
Minimum Operating Temperature:	- 65 C
Maximum Operating Temperature:	+ 200 C
Mounting Style:	Screw Mount
Package / Case:	M177
Packaging:	Tray
Pd - Power Dissipation:	330 W
Product Type:	RF Bipolar Transistors
Factory Pack Quantity:	1
Subcategory:	Transistors
Type:	RF Bipolar Power
Unit Weight:	0.723969 oz

Actual product photos

TH430D 5

Payment&Transportation

详情8.1

Official Certificate&Certificate

详情页3.1

Multiple product supply

详情5.1

Company office environment

详情6.1

Warehouse Real Shot

Standard packaging

详情9

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