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NCEP40P80D TO263 original stock high-voltage P-channel IGBT MOS transistor
Manufacturer Product Number
NCEP40P80D
Description
high-voltage P-channel IGBT field-effect transistor
Package Condition
TUBE
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| Part# | NCEP40P80D |
| Type： | high-voltage P-channel IGBT field-effect transistor |
| Manufactor | - |
| DC | NEW |
| Describe | TO263 |
| Supplier Device Packaging | TUBE |
| Technology | SGT-I |
| Polarity | P |
| BVDSS(V) | -40 |
| ID(A) | -80 |
| VTH(V) | -1.2 |
| RDS(ON)@10VTyp(mΩ) | 5.6 |
| RDS(ON)@4.5VTyp(mΩ) | 7.6 |
| QG(nC) | 57 |
| PD(W) | 150 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE/NCEP40P80D.pdf
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high-voltage P-channel IGBT field-effect transistor
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