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Hot sale original electronics IRLMS6702 20V Single P-Channel Power MOSFET in a TSOP-6 (Micro 6) package
Manufacturer
Manufacturer Product Number
IRLMS6702
Description
IRLMS6702 Power Field-Effect Transistor, 2.3A I(D), 20V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6
Package Condition
Original
Product Details
Summary of Features
-
Planar cell structure for wide SOA
-
Optimized for broadest availability from distribution partners
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Product qualification according to JEDEC standard
-
Silicon optimized for applications switching below <100KHz
-
Industry standard surface-mount power package
Benefits
-
Increased ruggedness
-
Wide availability from distribution partners
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Industry standard qualification level
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High performance in low frequency applications
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Standard pinout allows for drop-in replacement
Product Description
|
ANSC PART# |
ANSC- IRLMS6702 |
|
Part# |
IRLMS6702 |
|
Type： |
Integrated Circuits |
|
Manufactor |
Infineon Technologies |
|
DC |
new |
Actual image of the product
Parametrics
| Parametrics | IRLMS6702 |
|---|---|
| ID (@25°C) max | -2.4 A |
| Moisture Sensitivity Level | 1 |
| Mounting | SMD |
| Ptot (@ TA=25°C) max | 1.7 W |
| Package | TSOP-6 |
| Polarity | P |
| QG (typ @4.5V) | 5.8 nC |
| Qgd | 2.1 nC |
| RDS (on) (@4.5V) max | 200 mΩ |
| RthJA max | 75 K/W |
| Special Features | Small Power |
| Tj max | 150 °C |
| VDS max | -20 V |
| VGS(th) min | -0.7 V |
| VGS max | 12 V |
Product datasheet
For more information, please download
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Other Products In The same category:
IRLMS6702 Power Field-Effect Transistor, 2.3A I(D), 20V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6
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