Hot sale Original SI9945BDY-T1-GE3 Transistor MOSFET 2N-CH 60V 5.3A Mosfet Array 60V 5.3A 3.1W Surface Mount 8-SOIC

ANSC PART#

ANSC - SI9945BDY-T1-GE3

Category

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

FET, MOSFET Arrays

Manufacturer

-

Series

TrenchFET®

Packaging

Tape & Reel (TR)

Cut Tape (CT)

Part Status

Last Time Buy

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

5.3A

Rds On (Max) @ Id, Vgs

58mOhm @ 4.3A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

665pF @ 15V

Power - Max

3.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC

Base Product Number

SI9945