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Original BCP56T1G TRANS NPN 80V 1A SOT223 Bipolar (BJT) Transistor NPN 80 V 1 A 130MHz 1.5 W Surface Mount SOT-223 (TO-261)
SMD mount stand-alone SOT-223 TO-261 NPN 80V 6.5mm*3.5mm*1.63mm 5V 500mV@ 50mA 500mA 1A 100nA 100V 1.5W
Product Details
- NPN Silicon Epitaxial Transistor
BCP56 Series
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT−223
package, which is designed for medium power surface mount
applications.
Features
• High Current: 1.0 A
• The SOT−223 package can be soldered using wave or reflow. The
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
• Available in 12 mm Tape and Reel
Use BCP56T1G to Order the 7 inch/1000 Unit Reel
Use BCP56T3G to Order the 13 inch/4000 Unit Reel
• PNP Complement is BCP53T1G
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Product Description
TYPE |
DESCRIPTION |
---|---|
ANSC PART# | ANSC - BCP56T1G |
Category |
Discrete Semiconductor Products Transistors Bipolar (BJT) Single Bipolar Transistors |
Mfr |
onsemi |
Series |
- |
Packaging |
Tape & Reel (TR) Cut Tape (CT) |
Part Status |
Active |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
1 A |
Voltage - Collector Emitter Breakdown (Max) |
80 V |
Vce Saturation (Max) @ Ib, Ic |
500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
40 @ 150mA, 2V |
Power - Max |
1.5 W |
Frequency - Transition |
130MHz |
Operating Temperature |
-65°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
TO-261-4, TO-261AA |
Supplier Device Package |
SOT-223 (TO-261) |
Base Product Number |
BCP56 |
Actual image of the product
Product datasheet
For more information, please download
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