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Original SQ2309ES-T1_GE3 Transistor MOSFET P-CH 60V 1.7A TO236 P-Channel 60 V 1.7A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)
Manufacturer
Manufacturer Product Number
SQ2309ES-T1_GE3
Description
SQ2309ES-T1_GE3 Transistor MOSFET P-CH 60V 1.7A TO236 P-Channel 60 V 1.7A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)
Package Condition
Tape & Reel (TR) Cut Tape (CT)
Product Details
SQ2309ES-T1_GE3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 265pF @ 25V.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 125mOhm.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SQ2309ES-T1_GE3 Features
single MOSFETs transistor is 125mOhm
a 60V drain to source voltage (Vdss)
SQ2309ES-T1_GE3 Applications
There are a lot of Vishay Siliconix
SQ2309ES-T1_GE3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
Product Description
|
ANSC PART# |
ANSC- SQ2309ES-T1_GE3 |
|
Part# |
SQ2309ES-T1_GE3 |
|
Type： |
Transistor |
|
Manufactor |
Original |
|
DC |
new |
Actual image of the product
|
TYPE |
DESCRIPTION |
|---|---|
|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
|
Mfr |
Vishay Siliconix |
|
Series |
TrenchFET® |
|
Packaging |
Tape & Reel (TR) Cut Tape (CT) |
|
Part Status |
Obsolete |
|
FET Type |
P-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
60 V |
|
Current - Continuous Drain (Id) @ 25°C |
1.7A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
|
Rds On (Max) @ Id, Vgs |
336mOhm @ 3.8A, 10V |
|
Vgs(th) (Max) @ Id |
2.5V @ 250µA |
|
Gate Charge (Qg) (Max) @ Vgs |
8.5 nC @ 10 V |
|
Vgs (Max) |
±20V |
|
Input Capacitance (Ciss) (Max) @ Vds |
265 pF @ 25 V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
2W (Tc) |
|
Operating Temperature |
-55°C ~ 175°C (TJ) |
|
Grade |
Automotive |
|
Qualification |
AEC-Q101 |
|
Mounting Type |
Surface Mount |
|
Supplier Device Package |
SOT-23-3 (TO-236) |
|
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
|
Base Product Number |
SQ2309 |
Product datasheet
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SQ2309ES-T1_GE3 Transistor MOSFET P-CH 60V 1.7A TO236 P-Channel 60 V 1.7A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)
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