Hot sale Original NTNS3A65PZT5G Transistor P-Channel 20 V 281mA (Ta) 155mW (Ta) Surface Mount SOT-883 (XDFN3) (1x0.6)

Product Overview 

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 44pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 281mA. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.281A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 18 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Operating this transistor requires a 20V drain to source voltage (Vdss).

Product Features  

a continuous drain current (ID) of 281mA
a 20V drain to source voltage (Vdss)

Product Applications

There are a lot of ON Semiconductor
NTNS3A65PZT5G applications of single MOSFETs transistors.

· LCD/LED TV

· Consumer Appliances

· Lighting

· Uninterruptible Power Supply

· AC-DC Power Supply

· Synchronous Rectification for ATX 1 Server I Telecom PSU

· Motor drives and Uninterruptible Power Supplies

· Micro Solar Inverter

· DC/DC converters

· Power Tools

Product Description

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Product datasheet   

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