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Exact specifications should be obtained from the product data sheet.

Original SI1308EDL-T1-BE3 N-Channel Cut Tape 132mOhm @ 1.4A, 10V ±12V 105 pF @ 15 V 4.1 nC @ 10 V 30 V SC-70, SOT-323

Manufacturer
Manufacturer Product Number
SI1308EDL-T1-BE3
Description

SI1308EDL-T1-BE3 MOSFET N-CH 30V 1.5A/1.4A SC70-3 N-Channel 30 V 1.4A (Tc) 400mW (Ta), 500mW (Tc) Surface Mount SC-70-3

Package Condition
Tape & Reel (TR) Cut Tape (CT)

Product Details



   SI1308EDL-T1-BE3 Overview                 


The maximum input capacitance of this device is 105 pF @ 15 V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 30 V in order to operate.

    SI1308EDL-T1-BE3 Features                 


a 30 V drain to source voltage (Vdss)


    SI1308EDL-T1-BE3 Applications            


There are a lot of Vishay Siliconix
SI1308EDL-T1-BE3 applications of single MOSFETs transistors.

  • Micro Solar Inverter

  • DC/DC converters

  • Power Tools

  • Motor Drives and Uninterruptible Power Supples

  • Synchronous Rectification

  • Battery Protection Circuit

  • Telecom 1 Sever Power Supplies

  • Industrial Power Supplies

  • PFC stages, hard switching PWM stages and resonant switching

  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,



Product Description


ANSC PART#

 ANSC- SI1308EDL-T1-BE3

Part#

SI1308EDL-T1-BE3

Type:

Transistors

Manufactor

Original

DC

new


Actual image of the product 


31486.jpg

TYPE

DESCRIPTION

Category

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

Mfr

Vishay Siliconix

Series

TrenchFET®

Packaging

Tape & Reel (TR)

Cut Tape (CT)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

1.4A (Tc)

Rds On (Max) @ Id, Vgs

132mOhm @ 1.4A, 10V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4.1 nC @ 10 V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

105 pF @ 15 V

FET Feature

-

Power Dissipation (Max)

400mW (Ta), 500mW (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Grade

-

Qualification

-

Mounting Type

Surface Mount

Supplier Device Package

SC-70-3

Package / Case

SC-70, SOT-323

Base Product Number

SI1308


Product datasheet   

For more information, please download

17183291440e1b31.jpg

1718329144f963bf.jpg

1718329144bb42c4.jpg


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Official Certificate&Certificate

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Original SI1308EDL-T1-BE3 N-Channel Cut Tape 132mOhm @ 1.4A, 10V ±12V 105 pF @ 15 V 4.1 nC @ 10 V 30 V SC-70, SOT-323

SI1308EDL-T1-BE3 MOSFET N-CH 30V 1.5A/1.4A SC70-3 N-Channel 30 V 1.4A (Tc) 400mW (Ta), 500mW (Tc) Surface Mount SC-70-3

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