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Hot sale Original IRFB260N Power Field-Effect Transistor 56A I(D) 200V 0.04ohm 1-Element N-Channel Silicon

Manufacturer Product Number
IRFB260N
Description

IRFB260N Power Field-Effect Transistor 56A I(D) 200V 0.04ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor FET TO-220AB TO-220AB 3 PIN

Package Condition
Original
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Product Details


SMPS MOSFET
VDSS   RDS(on) max   ID
200V   0.040Ω           56A

Benefits
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
High frequency DC-DC converters
Applications


Product Description


TypeDescription
ANSC PART#ANSC- IRFB260N
Ihs ManufacturerOriginal
Part Package CodeTO-220AB
Package DescriptionFLANGE MOUNT, R-PSFM-T3
Pin Count3
Avalanche Energy Rating (Eas)450 mJ
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min200 V
Drain Current-Max (ID)56 A
Drain-source On Resistance-Max0.04 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT MODE
Operating Temperature-Max175 °C
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)380 W
Pulsed Drain Current-Max (IDM)220 A
Qualification StatusNot Qualified
Surface MountNO
Terminal FinishTIN LEAD
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON


Actual image of the product 

IRFB260N

Product datasheet 

For more information, please download

   

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Hot sale Original IRFB260N Power Field-Effect Transistor 56A I(D) 200V 0.04ohm 1-Element N-Channel Silicon

IRFB260N Power Field-Effect Transistor 56A I(D) 200V 0.04ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor FET TO-220AB TO-220AB 3 PIN

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