Hot sale Original FDN5618P Transistor MOSFET P-CH 60V 1.25A SUPERSOT3 P-Channel 60 V 1.25A (Ta) 500mW (Ta) Surface Mount

Product Description

The FDN5618P is a P-channel enhancement mode power MOSFET, designed for high-frequency switching applications. This surface-mount device features a compact TO-236-3 package and is suitable for use in a wide range of electronic systems.

Product Features  

· High current rating of 1.25A continuous drain current

· High voltage rating of 60V drain-to-source breakdown voltage

· Low Rds(on) of 170mΩ at 1.25A and 10V

· Fast switching times, with a fall time of 8ns and rise time of 8ns

· Operating temperature range of -55°C to 150°C

· Lead-free and RoHS3 compliant

Product Applications

· Primary applications include switching power supplies, motor control, and audio amplifiers

· Secondary applications include LED drivers, DC-DC converters, and power management systems

Embedded Modules:

· PowerTrench series of power MOSFETs

· High-frequency switching modules

Product Description

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