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Hot sale Original SI3459BDV-T1-E3 Transistors MOSFET P-CH 60V 2.9A 6TSOP P-Channel 60 V 2.9A (Tc) 3.3W (Tc) Surface Mount
Original SI3459BDV-T1-E3 Transistors MOSFET P-CH 60V 2.9A 6TSOP P-Channel 60 V 2.9A (Tc) 3.3W (Tc) Surface Mount 6-TSOP
Product Overview
The maximum input capacitance of this device is 350pF @ 30V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -2.9A.As shown in the table below, the drain current of this device is 0.0022A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 5 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -3V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.
Product Features
a continuous drain current (ID) of -2.9A
a threshold voltage of -3V
a 60V drain to source voltage (Vdss)
Product Applications
There are a lot of Vishay Siliconix
SI3459BDV-T1-E3 applications of single MOSFETs transistors.
· Micro Solar Inverter
· DC/DC converters
· Power Tools
· Motor Drives and Uninterruptible Power Supples
· Synchronous Rectification
· Battery Protection Circuit
· Telecom 1 Sever Power Supplies
· Industrial Power Supplies
· PFC stages, hard switching PWM stages and resonant switching
· PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Product Description
Type |
Description |
---|---|
ANSC PART# |
ANSC - SI3459BDV-T1-E3 |
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
Mfr |
Vishay Siliconix |
Series |
TrenchFET® |
Packaging |
Tape & Reel (TR) Cut Tape (CT) |
Part Status |
Last Time Buy |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
60 V |
Current - Continuous Drain (Id) @ 25°C |
2.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
216mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
12 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
350 pF @ 30 V |
FET Feature |
- |
Power Dissipation (Max) |
3.3W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
6-TSOP |
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
Base Product Number |
SI3459 |
Actual image of the product
Product datasheet
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