Hot sale Original SI2309CDS-T1-E3 Transistor MOSFET P-Channel 60 V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Product Overview 

A device's maximal input capacitance is 210pF @ 30V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is -1.2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -1V threshold voltage.This transistor requires a 60V drain to source voltage (Vdss).

Product Features   

a continuous drain current (ID) of -1.2A
a drain-to-source breakdown voltage of -60V voltage
a threshold voltage of -1V
a 60V drain to source voltage (Vdss)

Product Applications

There are a lot of Vishay Siliconix
SI2309CDS-T1-E3 applications of single MOSFETs transistors.

· Consumer Appliances

· Lighting

· Uninterruptible Power Supply

· AC-DC Power Supply

· Synchronous Rectification for ATX 1 Server I Telecom PSU

· Motor drives and Uninterruptible Power Supplies

· Micro Solar Inverter

· DC/DC converters

· Power Tools

· Motor Drives and Uninterruptible Power Supples

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