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Hot sale Original SQD50P04-13L_GE3 Transistors MOSFET P-Channel 40 V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

Manufacturer
Manufacturer Product Number
SQD50P04-13L_GE3
Description

SQD50P04-13L_GE3 P-Channel 40V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

Package Condition
Tape & Reel (TR) Cut Tape (CT)
Datasheet
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Product Details

Product Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3590pF @ 20V.This device has a continuous drain current (ID) of [50A], which is its maximum continuous current.MOSFETs have 10mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -1.5V.In order to operate this transistor, a voltage of 40V is needed from the drain to the source (Vdss).

Product Features 


a continuous drain current (ID) of 50A
single MOSFETs transistor is 10mOhm
a threshold voltage of -1.5V
a 40V drain to source voltage (Vdss)

Product Applications
SQD50P04-13L_GE3 applications of single MOSFETs transistors.

· Uninterruptible Power Supply

· AC-DC Power Supply

· Synchronous Rectification for ATX 1 Server I Telecom PSU

· Motor drives and Uninterruptible Power Supplies

· Micro Solar Inverter

· DC/DC converters

· Power Tools

· Motor Drives and Uninterruptible Power Supples

· Synchronous Rectification

· Battery Protection Circuit

Product Description

Type# Description
ANSC PART# ANSC - SQD50P04-13L_GE3
Category Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr /
Series TrenchFET®
Packaging Tape & Reel (TR)
Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C

50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3590 pF @ 20 V
FET Feature -
Power Dissipation (Max) 3W (Ta), 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)

Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number SQD50

Actual image of the product 

SQD50P04-13L_GE3

Product datasheet 

For more information, please download

 

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Hot sale Original SQD50P04-13L_GE3 Transistors MOSFET P-Channel 40 V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

SQD50P04-13L_GE3 P-Channel 40V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

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