Hot sale Original TN2510N8-G Transistors MOSFET N-Channel 100 V 730mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

Product Overview 

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 125pF @ 25V.This device conducts a continuous drain current (ID) of 730mA, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.73A.Pulsed drain current is maximum rated peak drain current 5A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.

Product Features  

a continuous drain current (ID) of 730mA
a drain-to-source breakdown voltage of 100V voltage
based on its rated peak drain current 5A.

Product Applications

There are a lot of Microchip Technology
TN2510N8-G applications of single MOSFETs transistors.

· Motor drives and Uninterruptible Power Supplies

· Micro Solar Inverter

· DC/DC converters

· Power Tools

· Motor Drives and Uninterruptible Power Supples

· Synchronous Rectification

· Battery Protection Circuit

· Telecom 1 Sever Power Supplies

· Industrial Power Supplies

· PFC stages, hard switching PWM stages and resonant switching

Product Description

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