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Hot sale Original FDD86367 Transistors MOSFET N-Channel 80 V 100A (Tc) 227W (Tj) Surface Mount TO-252 (DPAK)
Manufacturer
Manufacturer Product Number
FDD86367
Description
Original FDD86367 Transistors MOSFET (Metal Oxide) N-Channel 80 V 100A (Tc) 227W (Tj) Surface Mount TO-252 (DPAK)
Package Condition
Tape & Reel (TR) Cut Tape (CT)
Product Description
The FDD86367 is an N-Channel PowerTrench MOSFET from ON Semiconductor, designed for high-power applications in the automotive industry. This single-channel MOSFET is part of the JESD-609 code series and features a high input capacitance, low gate charge, and a maximum drain-to-source voltage of 80V.
Product Features
· High input capacitance (Ciss) of 4840pF at 40V
· Low gate charge (Qg) of 88nC at 10V
· N-Channel FET type with a single element configuration
· Drive voltage of 10V for maximum Rds On and minimum Rds On
· Operating temperature range of -55°C to 175°C TJ
· Power dissipation of 227W TJ
· Rds On of 4.2mΩ at 80A and 10V
· RoHS compliant and Pbfree
Product Applications
· Primary applications: High-power automotive applications, such as motor control, power conversion, and power distribution
· Secondary applications: General-purpose power switching, power conversion, and power distribution in industrial and consumer electronics
Product Description
|
ANSC PART# |
ANSC- FDD86367 |
|
Part# |
FDD86367 |
|
Type： |
Transistors |
|
Manufactor |
Original |
|
DC |
new |
|
Part Status |
Active |
Product images
Product Attributes
|
Type |
Description |
|---|---|
|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
|
Mfr |
onsemi |
|
Series |
PowerTrench® |
|
Packaging |
Tape & Reel (TR) Cut Tape (CT) |
|
Part Status |
Active |
|
FET Type |
N-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
80 V |
|
Current - Continuous Drain (Id) @ 25°C |
100A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On) |
10V |
|
Rds On (Max) @ Id, Vgs |
4.2mOhm @ 80A, 10V |
|
Vgs(th) (Max) @ Id |
4V @ 250µA |
|
Gate Charge (Qg) (Max) @ Vgs |
88 nC @ 10 V |
|
Vgs (Max) |
±20V |
|
Input Capacitance (Ciss) (Max) @ Vds |
4840 pF @ 40 V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
227W (Tj) |
|
Operating Temperature |
-55°C ~ 175°C (TJ) |
|
Grade |
Automotive |
|
Qualification |
AEC-Q101 |
|
Mounting Type |
Surface Mount |
|
Supplier Device Package |
TO-252 (DPAK) |
|
Package / Case |
TO-252-3, DPAK (2 Leads + Tab), SC-63 |
|
Base Product Number |
FDD863 |
Product datasheet
For more information, please download
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Original FDD86367 Transistors MOSFET (Metal Oxide) N-Channel 80 V 100A (Tc) 227W (Tj) Surface Mount TO-252 (DPAK)
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