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Manufacturer Product Number
transistor 2SC1971
Description
2SC1971 RF Power Bipolar Transistor 1-Element Silicon NPN 4PIN
Package Condition
Original
Datasheet
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Product Details
DESCRIPTION
2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power
Amplifiers on VHF band mobile radio applications.
FEATURES
● High power gain: Gpe ≥ 10dB,
@VCC = 13.5V, Po = 6W, f = 175MHz
● Emitter ballasted construction, gold metallization for high
reliability and good performances.
● TO-220 package similar is combinient for mounting.
● Ability to withstand more than 20:1 load
VSWR when operated at VCC = 15.2V, Po = 6W, f = 175MHz
APPLICATION
4 to 5 watts output power amplifiers in VHF band applications.
Product Description
| Type# | Description |
| PART# | transistor 2SC1971 |
| hs Manufacturer | / |
| Part Package Code | SFM |
| Package Description | FLANGE MOUNT, R-PSFM-T3 |
| Pin Count | 3 |
| Samacsys Manufacturer | / |
| Case Connection | EMITTER |
| Collector Current-Max (IC) | 12 A |
| Collector-Emitter Voltage-Max | 17 V |
| Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 10 |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | NPN |
| Power Dissipation Ambient-Max | 12.5 W |
| Power Dissipation-Max (Abs) | 1.5 W |
| Power Gain-Min (Gp) | 10 dB |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
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2SC1971 RF Power Bipolar Transistor 1-Element Silicon NPN 4PIN
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