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Hot-selling and scarce BLF4G22LS-130 UHF power LDMOS transistor SMD spot stock
BLF4G22LS-130 UHF power LDMOS transistor SMD spot stock
Product Descriptions
130 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHz.
Product Features
■ Typical 2-carrier W-CDMA performance at a supply voltage of 28 V and an IDq of 1150 mA:
◆ Average output power = 33 W
◆ Power gain = 13 .8 dB
◆ Efficiency = 26 %
◆ ACPR = −41 dBc
◆ IMD3 = −37 dBc
■ Easy power control
■ Integrated ESD protection
■ Excellent ruggedness (> 10 : 1 VSWR at 130 W (CW))
■ High efficiency
■ High peak power capability (> 190 W)
■ Excellent thermal stability
■ Designed for broadband operation (2000 MHz to 2200 MHz)
■ Internally matched for ease of use
Product Applications
■ RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range.
Product Photos
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