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Hot-selling and scarce BLF4G22LS-130 UHF power LDMOS transistor SMD spot stock

Manufacturer Product Number
BLF4G22LS-130
Description

BLF4G22LS-130 UHF power LDMOS transistor SMD spot stock

Package Condition
TaPe & Reel
Datasheet
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Product Descriptions

130 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHz.

Product Features

■   Typical 2-carrier W-CDMA performance at a supply voltage of 28 V and an IDq of 1150 mA:

◆ Average output power = 33 W

◆ Power gain = 13 .8 dB

◆ Efficiency = 26 %

◆ ACPR = −41 dBc

◆ IMD3 = −37 dBc

■   Easy power control

■   Integrated ESD protection

■   Excellent ruggedness (> 10 : 1 VSWR at 130 W (CW))

■   High efficiency

■   High peak power capability (> 190 W)

■   Excellent thermal stability

■   Designed for broadband operation (2000 MHz to 2200 MHz)

■   Internally matched for ease of use

Product Applications

■   RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range.

Product Photos

BLF4G22LS-130

For more product information, please download the PDF

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Hot-selling and scarce BLF4G22LS-130 UHF power LDMOS transistor SMD spot stock

BLF4G22LS-130 UHF power LDMOS transistor SMD spot stock

Write your review

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