Free hotline:
+86 135 5637 6665
+852 2632 9637
Image shown is a representation only.
Exact specifications should be obtained from the product data sheet.
Hot-selling and scarce FDV303N N-ChanneL Digital FET SOT23-3 spot stock
Manufacturer Product Number
FDV303N
Description
FDV303N N-ChanneL Digital FET SOT23-3 spot stock
Package Condition
Tape & Reel (TR)
Datasheet
We are just Spot traders, Stockists, Sraders, PCBA&BOM service providers,Purchaser.
All intellectual property rights of products on our website belong to the original factory!
(In addition to ANSC's own customized products)
Product Descriptions
These N−Channel enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on−state resistance at low gate drive conditions.This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high−efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on−state resistance even at gate drive voltages as low as 2.5 V.
Product Features
• 25 V,0.68 A Continuous,2 A Peak
♦ RDS(ON) =0.45 Ω @VGS =4.5 V
♦ RDS(ON) =0.6 Ω @VGS=2.7 V
• Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits,VGS(th) < 1 V
• Gate−Source Zener for ESD Ruggedness, >6 kV Human Body Model
• Compact Industry Standard SOT−23 Surface Mount Package
• This Device is Pb−Free,Halogen Free/BFR Free and is RoHS Compliant
Product Specifications
| Attribute | Attribute value |
| ANSM-Part# | ANSM-FDV303N |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | - |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Digi-Reel® | |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25 V |
| Current - Continuous Drain (Id) @ 25°C | 680mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 2.3 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 10 V |
| Power Dissipation (Max) | 350mW (Ta) |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | FDV303 |
Product Photos
For more product information, please download the PDF
Other Products In The same category:
FDV303N N-ChanneL Digital FET SOT23-3 spot stock
2710In stock:
Can ship immediately