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Hot-selling and scarce MAT01GH Matched Monolithic Dual Transistor TO-78-6 spot stock
MAT01GH Matched Monolithic Dual Transistor TO-78-6 spot stock
Product Descriptions
The MAT01 is a monolithic dual NPN transistor. An exclusivesilicon nitride triple passivation process provides excellentstability of critical parameters over both temperature and time .Matching characteristics include offset voltage of 40 µV,temperature drift of 0.15 µV/°C, and hFE matching of 0.7%.
High hFE is provided over a six decade range of collectorcurrent, including an exceptional hFE of 590 at a collectorcurrent of only 10 nA. The high gain at low collector currentmakes the MAT01 ideal for use in low power, low level inputstages .
Product Features
Low VOS (VBE match): 40 µV typical, 100 µV maximum
Low TCVOS: 0.5 µV/°C maximum
High hFE: 500 minimum
Excellent hFE linearity from 10 nA to 10 mA
Low noise voltage: 0.23 µV p-p from 0.1 Hz to 10 Hz
High breakdown: 45 V min
Product Applications
Weigh scales
Low noise, op amp, front end
Current mirror and current sink/source
Low noise instrumentation amplifiers
Voltage controlled attenuators
Log amplifiers
Product Specifications
| Attribute | Attribute value |
| ANSM-Part# | ANSM-MAT01GH |
| Category | Discrete Semiconductor Products |
| Transistors | |
| Bipolar (BJT) | |
| Bipolar Transistor Arrays | |
| Manufacturer | - |
| Packaging | Tube |
| Part Status | Discontinued at DigiKey |
| Transistor Type | 2 NPN (Dual) Matched Pair |
| Current - Collector (Ic) (Max) | 25mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 400nA |
| Power - Max | 500mW |
| Frequency - Transition | 450MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-78-6 Metal Can |
| Supplier Device Package | TO-78-6 |
| Base Product Number | MAT01 |
Product Photos

For more product information, please download the PDF