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Hot sale Original IRF9310TRPBF Transistor MOSFET P-CH 20A 8SO P-Channel 30V 20A(Tc) 2.5W(Ta) Surface Mount 8-SO

Manufacturer
Manufacturer Product Number
IRF9310TRPBF
Description

Original IRF9310TRPBF Transistor MOSFET P-CH 20A 8SO P-Channel 30V 20A(Tc) 2.5W(Ta) Surface Mount 8-SO

Package Condition
Tape & Reel (TR) Cut Tape (CT)

Product Overview 

When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 630 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5250pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -20A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-30V. And this device has -30V drain to source breakdown voltage.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 25 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -1.8V threshold voltage. Operating this transistor requires a 30V drain to source voltage (Vdss).

Product Features   

the avalanche energy rating (Eas) is 630 mJ
a continuous drain current (ID) of -20A
a drain-to-source breakdown voltage of -30V voltage
a threshold voltage of -1.8V
a 30V drain to source voltage (Vdss)

Product Applications

There are a lot of Infineon Technologies
IRF9310TRPBF applications of single MOSFETs transistors.

· LCD/LED TV

· Consumer Appliances

· Lighting

· Uninterruptible Power Supply

· AC-DC Power Supply

· Synchronous Rectification for ATX 1 Server I Telecom PSU

· Motor drives and Uninterruptible Power Supplies

· Micro Solar Inverter

· DC/DC converters

· Power Tools

 

Product Description

Type

Description

ANSC PART#

ANSC - IRF9310TRPBF

Category

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

HEXFET®

Packaging

Tape & Reel (TR)

Cut Tape (CT)

Part Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

165 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5250 pF @ 15 V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

Base Product Number

IRF9310

Actual image of the product 

37438.jpg

Product datasheet   

For more information, please download

   

IRF9310TRPBF-2.png

IRF9310TRPBF-3.png

Payment&Transportation

Official Certificate&Certificate

Standard packaging

Multiple product supply

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Hot sale Original IRF9310TRPBF Transistor MOSFET P-CH 20A 8SO P-Channel 30V 20A(Tc) 2.5W(Ta) Surface Mount 8-SO

Original IRF9310TRPBF Transistor MOSFET P-CH 20A 8SO P-Channel 30V 20A(Tc) 2.5W(Ta) Surface Mount 8-SO

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