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Hot sale Original IRF9310TRPBF Transistor MOSFET P-CH 20A 8SO P-Channel 30V 20A(Tc) 2.5W(Ta) Surface Mount 8-SO
Original IRF9310TRPBF Transistor MOSFET P-CH 20A 8SO P-Channel 30V 20A(Tc) 2.5W(Ta) Surface Mount 8-SO
Product Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 630 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5250pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -20A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-30V. And this device has -30V drain to source breakdown voltage.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 25 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -1.8V threshold voltage. Operating this transistor requires a 30V drain to source voltage (Vdss).
Product Features
the avalanche energy rating (Eas) is 630 mJ
a continuous drain current (ID) of -20A
a drain-to-source breakdown voltage of -30V voltage
a threshold voltage of -1.8V
a 30V drain to source voltage (Vdss)
Product Applications
There are a lot of Infineon Technologies
IRF9310TRPBF applications of single MOSFETs transistors.
· LCD/LED TV
· Consumer Appliances
· Lighting
· Uninterruptible Power Supply
· AC-DC Power Supply
· Synchronous Rectification for ATX 1 Server I Telecom PSU
· Motor drives and Uninterruptible Power Supplies
· Micro Solar Inverter
· DC/DC converters
· Power Tools
Product Description
Type |
Description |
---|---|
ANSC PART# |
ANSC - IRF9310TRPBF |
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
Mfr |
Infineon Technologies |
Series |
HEXFET® |
Packaging |
Tape & Reel (TR) Cut Tape (CT) |
Part Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
30 V |
Current - Continuous Drain (Id) @ 25°C |
20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
4.6mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id |
2.4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs |
165 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
5250 pF @ 15 V |
FET Feature |
- |
Power Dissipation (Max) |
2.5W (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
8-SO |
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
Base Product Number |
IRF9310 |
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Product datasheet
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