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Original spot NCE65T900F TO220F high-voltage N-channel IGBT field-effect transistor
Manufacturer
Manufacturer Product Number
NCE65T900F
Description
high-voltage N-channel IGBT field-effect transistor
Package Condition
TUBE
Part# | NCE65T900F |
Type: | high-voltage N-channel IGBT field-effect transistor |
Manufactor | NCE |
DC | NEW |
Describe | TO220F |
Supplier Device Packaging | TUBE |
Technology | SJ-Ⅲ |
Polarity | N |
BVDSS(V) | 650 |
ID(A) | 5 |
VTH(V) | 3.5 |
RDS(ON)@10VTyp(mΩ) | 750 |
PD(W) | 29.8 |
PKG | / |
Product Data Book:https://allnewsemi.shop/img/cms/IC/NCE65T900F.pdf
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